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QEE213 Plastic Infrared Light Emitting Diode May 2005 QEE213 Plastic Infrared Light Emitting Diode Features Wavelength = 940 nm, GaAs Package Type: Sidelooker Medium Beam Angle, 50 Clear Plastic Package Matched Photosensors: QSE213 and QSE243 Description The QEE213 is a 940nm GaAs LED encapsulated in a medium angle, thin plastic sidelooker package. Package Dimensions 0.060 (1.50) 0.174 (4.44) R 0.030 (0.76) 0.047 (1.20) 0.224 (5.71) 0.177 (4.51) 0.030 (0.76) 0.5 (12.7) MIN CATHODE 0.020 (0.51) SQ. (2X) 0.100 (2.54) CATHODE Schematic ANODE NOTES: 1. Dimensions for all drawings are in inches (millimeters). 2. Tolerance of .010 (.25) on all non nominal dimensions unless otherwise specified. (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com QEE213 Rev. 1.0.0 QEE213 Plastic Infrared Light Emitting Diode Absolute Maximum Ratings (TA = 25C unless otherwise specified) Parameter Operating Temperature Storage Temperature Soldering Temperature (Iron)(2,3,4) Soldering Temperature (Flow)(2,3) Continuous Forward Current Reverse Voltage Peak Forward Current(5) Power Dissipation(1) Symbol TOPR TSTG TSOL-I TSOL-F IF VR IFP PD Rating -40 to + 100 -40 to + 100 240 for 5 sec 260 for 10 sec 100 5 1 100 Unit C C C C mA V A mW Electrical/Optical Characteristics (TA =25C) Parameter Peak Emission Wavelength Emission Angle Forward Voltage Reverse Current Radiant Intensity Rise Time Fall Time Notes 1. Derate power dissipation linearly 2.67 mW/C above 25C. 2. RMA flux is recommended. 3. Methanol or isopropyl alcohols are recommended as cleaning agents. 4. Soldering iron 1/16" (1.6 mm) minimum from housing. 5. Pulse conditions: tp = 100 s, T = 10 ms. Test Conditions IF = 100 mA IF = 100 mA IF = 100 mA, tp = 20 ms VR = 5 V IF = 100 mA, tp = 20 ms IF = 100 mA tp = 100 s, T = 10 mS Symbol lP U VF IR Ie tr tf Min -- -- -- -- 2 -- -- Typ 940 25 -- -- -- 1 1 Max -- -- 1.5 10 -- -- -- Units nm Deg. V A mW/sr s 2 QEE213 Rev. 1.0.0 www.fairchildsemi.com QEE213 Plastic Infrared Light Emitting Diode Typical Performance Curves Fig. 1 Forward Current vs. Forward Voltage 103 Fig. 2 Forward Voltage vs. Ambient Temperature 2.0 IF - FORWARD CURRENT (mA) VF - FORWARD VOLTAGE (V) IF Pulsed tpw = 100 s TA = 25C 102 IF = 50 mA 1.5 IF = 100 mA 1.0 IF = 20 mA 101 0.5 IF Pulsed tpw = 100 s Duty Cycle = 0.1% 100 0 1 2 3 4 5 6 0.0 -40 -20 0 20 40 60 80 100 VF - FORWARD VOLTAGE (V) TA - AMBIENT TEMPERATURE (C) Fig. 3 Normalized Radiant Intensity vs. Forward Current IE - NORMALIZED RADIANT INTENSITY 10 Normalized to: IF = 100 mA Pulsed tpw = 100 s Duty Cycle = 0.1% TA = 25C Fig. 4 Radiation Diagram 1 120 130 140 150 110 100 90 80 70 60 50 40 30 20 10 0.1 0.01 160 170 0.001 0 10 100 1000 180 1.0 0.8 0.6 0.4 0.2 0 0.2 0.4 0.6 0.8 0 1.0 IF - FORWARD CURRENT (mA) 3 QEE213 Rev. 1.0.0 www.fairchildsemi.com QEE213 Plastic Infrared Light Emitting Diode TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FAST ActiveArrayTM FASTrTM BottomlessTM FPSTM CoolFETTM FRFETTM CROSSVOLTTM GlobalOptoisolatorTM DOMETM GTOTM EcoSPARKTM HiSeCTM E2CMOSTM I2CTM EnSignaTM i-LoTM FACTTM ImpliedDisconnectTM FACT Quiet SeriesTM IntelliMAXTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM Across the board. Around the world.TM OPTOLOGIC OPTOPLANARTM The Power Franchise PACMANTM Programmable Active DroopTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench QFET QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic TINYOPTOTM TruTranslationTM UHCTM UltraFET UniFETTM VCXTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I15 4 QEE213 Rev. 1.0.0 www.fairchildsemi.com |
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